1 HM2030Q dual n - ch fast switching mosfets symbol parameter rating units v ds drain - source voltage 2 0 v v gs gate - sou r ce voltage 8 v i d @t c =25 continuous drain current, v gs @ 4.5 v 1 5 6 a i d @t c = 10 0 continuous drain current, v gs @ 4.5 v 1 35 .6 a i d @t a =25 continuous drain current, v gs @ 4.5 v 1 19 a i d @t a = 7 0 continuous drain current, v gs @ 4.5 v 1 15 a i dm pulsed drain current 2 100 a p d @t c =2 5 total power dissipation 1 31 w p d @t a =25 total power dissipation 1 3.6 w t stg storage temperature range - 55 to 150 t j operating junction temperature range - 55 to 150 symbol parameter typ. max. unit r ja thermal re sistance junction - ambient 1 --- 35 /w r j c thermal resistance junction - case 1 --- 4 /w bvdss rds on id 2 0 v 5.8 m 5 6 a the + 0 4 is the highest performance trench n- ch mosfets with extreme high cell density, which provide excellent r dson and gate charge for most of the small power switching and load switch applications. ohs product requirement wit h full function reliability approved. general description absolute maximum ratings thermal data dfn 3 x3 pin configuration product summ a ry pin1 ? green device available ? super low gate charge ? excellent cdv/dt effect decline ? advanced high cell density trench technology the HM2030Q meet the rohs and green
2 symbol parameter conditions min. typ. max. unit bv dss drain - source breakdown voltage v gs =0v , i d =250ua 2 0 --- --- v r ds(on) static drain - source on - resistance 2 v gs = 4.5 v , i d = 3 a 3.5 4.3 5.8 m ? v gs = 3.9 v , i d = 3 a 3.7 4.5 6 .5 v gs = 2.5 v , i d = 3 a 4 5 7 v gs = 1.8 v , i d = 3 a 5.6 7 1 1 v gs(th) gate threshold voltage v gs =v ds , i d =250ua 0. 4 --- 1. 0 v i dss drain - source leakage current v ds = 1 6 v , v gs =0v , t j =25 --- --- 1 ua v ds =1 6 v , v gs =0v , t j =55 --- --- 5 i gss gate - source leakage current v gs = 8 v , v ds =0v --- --- 10 u a gfs forward transconductance v ds =5 v , i d = 3 a --- 42 --- s q g total gate charge (4.5 v) v ds = 10 v , i d = 3 a --- 38 --- nc total gate charge (3.9 v) --- 33 --- q gs gate - so urce charge --- 4.5 --- q gd gate - drain charge --- 12 --- t d(on) turn - on delay time v dd =16 v , v gs = 4.5 v , r g = 6 ? i d = 3 a --- 2 2 --- ns t r rise time --- 41 --- t d(off) turn - off delay time --- 7 7 --- t f fall time --- 2 1 --- c iss input capacitance v ds = 10 v , v gs =0v , f=1mhz --- 31 6 5 --- pf c oss output capacitance --- 380 --- c rss reverse transfer capacitance --- 325 --- symbol parameter conditions min. typ. max. unit i s continuous source current 1 v g =v d =0v , force current --- --- 30 a i sm pulsed source current 2 --- --- 10 0 a v sd diode forward voltage 2 v gs =0v , i s = 3 a , t j =25 --- --- 1.2 v note : 1.the data tested by surface mounted on a 1 inch 2 fr - 4 board with 2oz copper, t 10s . 2.the data tested by pulsed , pulse width Q 10us , duty cycle Q 1% diode characteristics n - channel electrical characteristics (t j =25 , unless otherwise noted) HM2030Q dual n - ch fast switching mosfets
fig.5 v gs(th) vs. t j 3 3 typical characteristics fig.1 typical output characteristics fig.2 on - resistan ce vs . g - s voltage fig. 3 source - drain forward c haracteristics fig. 4 gate - c harge c haracteristics fig. 6 normalized r dson vs. t j HM2030Q dual n - ch fast switching mosfets
4 4 fig .8 capacitance fig. 9 normalized maximum transient thermal impedance fig. 7 safe o perating a rea fig. 10 switching time waveform fig. 11 gate charge waveform HM2030Q dual n - ch fast switching mosfets 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r ja ) 0.01 0.05 0.1 0.2 duty=0.5 single p dm d = t on /t t jpeak = t a +p dm xr ja t on t 0.02 t d(on) t r t on t d(off) t f t off v ds v gs 90% 10%
5 5 dfn3x3 package outline dimensions HM2030Q dual n - ch fast switching mosfets
6 marking instruction HM2030Q dual n - ch fast switching mosfets
7 dfn3x3 tape and reel data HM2030Q dual n - ch fast switching mosfets
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